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 UNISONIC TECHNOLOGIES CO., LTD
8550S
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
FEATURES
*Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8550S
PNP SILICON TRANSISTOR
3
2
1
SOT-23
1 TO-92
*Pb-free plating product number: 8550SL
ORDERING INFORMATION
Order Number Normal Lead Free Plating 8550S-x-AE3-R 8550SL-x-AE3-R 8550S-x-T92-B 8550SL-x-T92-B 8550S-X-T92-K 8550SL-x-T92-K Package SOT-23 TO-92 TO-92 Pin Assignment 1 2 3 E B C E C B E C B Packing Tape Reel Tape Box Bulk
8550SL-x-AE3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AE3: SOT-23, T92: TO-92 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn
MARKING (For SOT-23 Package)
B9
Lead Plating
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25 ) SOT-23 TO-92 SYMBOL VCBO VCEO VEBO PC
PNP SILICON TRANSISTOR
RATING -30 -20 -5
UNITS V V V
350 mW 1 W Collector Current IC -700 mA Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) VBE fT Cob TEST CONDITIONS Ic=-100A,IE=0 Ic=-1mA,IB=0 IE=-100A,Ic=0 VCB=-30V,IE=0 VEB=-5V,Ic=0 VCE=-1V,Ic=-1mA VCE=-1V,Ic=-150 mA VCE=-1V,Ic=-500mA Ic=-500mA,IB=-50mA Ic=-500mA,IB=-50mA VCE=-1V,Ic=-10mA VCE=-10V,Ic=-50mA VCB=-10V,IE=0, f=1MHz MIN -30 -20 -5 TYP MAX UNIT V V V -1 uA -100 nA 400 -0.5 -1.2 -1.0 100 9.0 V V V MHz pF
100 120 40
CLASSIFICATION OF hFE2
RANK RANGE C 120-200 D 160-300 E 280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Static Characteristics
0.5
PNP SILICON TRANSISTOR
DC Current Gain
3 10
IB=-3.0mA IB=-2.5mA IB=-2.0mA
Collector Current, Ic (mA)
VCE=-1V
DC Current Gain, hFE
2.0
0.4
2 10
0.3
IB=-1.5mA
0.2
IB=-1.0mA IB=-0.5mA
1 10
0.1
0 0 0.4 0.8 1.2 1.6
0 10
-1 10
0 10
1 10
2 10
3 10
Collector-Emitter Voltage ( V)
Collector Current, Ic (mA)
Base-Emitter on Voltage
2 10 10 4
Saturation Voltage
Ic=10*IB
Collector Current, Ic (mA)
1 10
Saturation Voltage (mV)
VCE=-1V
10
3
VBE(SAT )
0 10
10
2
VCE(SAT)
1 -1 10 10 0 1 10 10 2 3 10
-1 10 0 0.2 0.4 0.6 0.8 1.0
10
Base-Emitter Voltage (V)
Collector Current, Ic (mA)
Current Gain -Bandwidth Product
Current Gain-Bandwidth Product, fT(MHz)
3 10 3 10
Collector Output Capacitance
VCE=-10V
2 10
Capacitance, Cob (pF)
2 10
f=1MHz IE=0
1 10
1 10
0 10 0 10
1 10
2 10
3 10
0 10
0 10
10
1
10
2
10
3
Collector Current Ic (mA) ,
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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